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CM300DU-12F
Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
Trench Gate Design Dual IGBTMODTM
300 Amperes/600 Volts
TC MEASURING POINT A D T (4 TYP.) F
G2
BE CM
E2
H U J H
C2E1
E2
C1
E1 G1
V
Q S - NUTS (3 TYP) K K
Q K
P
N R M
G
C
L
G2 E2 RTC C2E1 E2 RTC E1 G1
Description: Powerex IGBTMODTM Modules are designed for use in switching applications. Each module consists of two IGBT Transistors in a halfbridge configuration with each transistor having a reverse-connected super-fast recovery free-wheel diode. All components and interconnects are isolated from the heat sinking baseplate, offering simplified system assembly and thermal management. Features: Low Drive Power Low VCE(sat) Discrete Super-Fast Recovery Free-Wheel Diode Isolated Baseplate for Easy Heat Sinking Applications: AC Motor Control UPS Battery Powered Supplies Ordering Information: Example: Select the complete module number you desire from the table - i.e. CM300DU-12F is a 600V (VCES), 300 Ampere Dual IGBTMODTM Power Module.
Type CM Current Rating Amperes 300 VCES Volts (x 50) 12
C1
Outline Drawing and Circuit Diagram Dimensions A B C D E F G H J K Inches 4.25 2.44 Millimeters 108.0 62.0 Dimensions L M N P Q R S T U V Inches 0.87 0.33 0.10 0.85 0.98 0.11 M6 0.26 Dia 0.02 0.62 Millimeters 22.0 8.5 2.5 21.5 25.0 2.8 M6 6.5 Dia. 0.5 15.85
1.14 +0.04/-0.02 29.0 +1.0/-0.5 3.660.01 1.880.01 0.67 0.16 0.24 0.59 0.55 93.00.25 48.00.25 17.0 4.0 6.0 15.0 14.0
1
Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 CM300DU-12F Trench Gate Design Dual IGBTMODTM 300 Amperes/600 Volts
Absolute Maximum Ratings, Tj = 25 C unless otherwise specified
Ratings Junction Temperature Storage Temperature Collector-Emitter Voltage (G-E SHORT) Gate-Emitter Voltage (C-E SHORT) Collector Current (Tc = 25C) Peak Collector Current (Tj 150C) Emitter Current** (Tc = 25C) Peak Emitter Current** Maximum Collector Dissipation (Tc = 25C) Mounting Torque, M6 Main Terminal Mounting Torque, M6 Mounting Weight Isolation Voltage (Main Terminal to Baseplate, AC 1 min.) Symbol Tj Tstg VCES VGES IC ICM IE IEM Pc - - - Viso CM300DU-12F -40 to 150 -40 to 125 600 20 300 600* 300 600* 830 40 40 400 2500 Units C C Volts Volts Amperes Amperes Amperes Amperes Watts in-lb in-lb Grams Volts
Static Electrical Characteristics, Tj = 25 C unless otherwise specified
Characteristics Collector-Cutoff Current Gate Leakage Current Gate-Emitter Threshold Voltage Collector-Emitter Saturation Voltage Symbol ICES IGES VGE(th) VCE(sat) QG VEC Test Conditions VCE = VCES, VGE = 0V VGE = VGES, VCE = 0V IC = 30mA, VCE = 10V IC = 300A, VGE = 15V, Tj = 25C IC = 300A, VGE = 15V, Tj = 125C Total Gate Charge Emitter-Collector Voltage** VCC = 300V, IC = 300A, VGE = 15V IE = 300A, VGE = 0V Min. - - 5 - - - - Typ. - - 6 1.6 1.6 1860 - Max. 1 40 7 2.2 - - 2.6 Units mA A Volts Volts Volts nC Volts
* Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed Tj(max) rating. ** Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
2
Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 CM300DU-12F Trench Gate Design Dual IGBTMODTM 300 Amperes/600 Volts
Dynamic Electrical Characteristics, Tj = 25 C unless otherwise specified
Characteristics Input Capacitance Output Capacitance Reverse Transfer Capacitance Inductive Load Switch Times Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Symbol Cies Coes Cres td(on) tr td(off) tf trr Qrr VCC = 300V, IC = 300A, VGE1 = VGE2 = 15V, RG = 2.1 , Inductive Load Switching Operation IE = 300A VCE = 10V, VGE = 0V Test Conditions Min. - - - - - - - - - Typ. - - - - - - - - 5.2 Max. 81 5.4 3 250 120 500 250 150 - Units nf nf nf ns ns ns ns ns C
Diode Reverse Recovery Time** Diode Reverse Recovery Charge**
Thermal and Mechanical Characteristics, Tj = 25 C unless otherwise specified
Characteristics Thermal Resistance, Junction to Case Symbol Rth(j-c)Q Rth(j-c)D Rth(j-c)'Q Rth(c-f) Test Conditions Per IGBT 1/2 Module, Tc Reference Point per Outline Drawing Thermal Resistance, Junction to Case Per FWDi 1/2 Module, Tc Reference Point per Outline Drawing Thermal Resistance, Junction to Case Per IGBT 1/2 Module, Tc Reference Point Under Chip Contact Thermal Resistance Per Module, Thermal Grease Applied - 0.020 - C/W
** Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
Min. -
Typ.
Max. 0.16
Units C/W C/W C/W
-
-
0.24
-
0.08
3
Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 CM300DU-12F Trench Gate Design Dual IGBTMODTM 300 Amperes/600 Volts
OUTPUT CHARACTERISTICS (TYPICAL)
COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL)
COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL)
600
COLLECTOR CURRENT, IC, (AMPERES)
COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS)
500 400 300
VGE = 20V 9
COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS)
Tj = 25oC
11 15
10
3
9.5 VGE = 15V Tj = 25C Tj = 125C
5
Tj = 25C
4 3
IC = 600A
2
8.5
2 1
200 100 0 0 1 2 3 4
COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)
1
IC = 300A IC = 120A
8 7.5
0 0 100 200 300 400 500 600
COLLECTOR-CURRENT, IC, (AMPERES)
0 0 6 8 10 12 14 16 18 20
GATE-EMITTER VOLTAGE, VGE, (VOLTS)
FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL)
CAPACITANCE VS. VCE (TYPICAL)
HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL)
103
Tj = 25C
CAPACITANCE, Cies, Coes, Cres, (nF)
EMITTER CURRENT, IE, (AMPERES)
102
Cies
SWITCHING TIME, (ns)
103
td(off) td(on)
101
tf
102
102
VCC = 300V VGE = 15V RG = 2.1 Tj = 125C Inductive Load
Coes
100
VGE = 0V
Cres
tr
101 0 1.0 2.0 3.0 4.0
EMITTER-COLLECTOR VOLTAGE, VEC, (VOLTS)
10-1
10-1
100
101
102
101
101
102
COLLECTOR CURRENT, IC, (AMPERES)
103
COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)
NORMALIZED TRANSIENT THERMAL IMPEDANCE, Zth(j-c) Zth = Rth * (NORMALIZED VALUE)
REVERSE RECOVERY CHARACTERISTICS (TYPICAL)
REVERSE RECOVERY CURRENT, Irr, (AMPERES)
GATE CHARGE, VGE
TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (IGBT & FWDi)
103
REVERSE RECOVERY TIME, trr, (ns)
103
20
GATE-EMITTER VOLTAGE, VGE, (VOLTS)
101
10-3
10-2
10-1
100
101
IC = 300A
16 12 8 4
VCC = 200V VCC = 300V
100
Per Unit Base Rth(j-c) = 0.16C/W (IGBT) Rth(j-c) = 0.24C/W (FWDi) Single Pulse TC = 25C
102
Irr trr VCC = 300V VGE = 15V RG = 2.1 Tj = 25C Inductive Load
102
10-1
10-1
10-2
10-2
101 101
102
EMITTER CURRENT, IE, (AMPERES)
101 103
0 0 500 1000 1500 2000 2500
GATE CHARGE, QG, (nC)
10-3 10-5
TIME, (s)
10-4
10-3 10-3
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